MRF5S4140HR3 Datasheet, PDF (2/20 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 400 μAdc)
V_GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1250 mAdc, Measured in Functional Test)
V_GS(Q)
3
4
5
Vdc
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 2.42 Adc)
V_DS(on)
0.1
0.2
0.3
Vdc
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3 Adc)
g_fs
—
6.2
—
S
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
2.3
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1250 mA, P_out = 28 W Avg. N - CDMA,
f = 465 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
20
21
23
dB
Drain Efficiency
η_D
28.5
30
—
%
Adjacent Channel Power Ratio
ACPR
—
- 47.6
- 45
dBc
Input Return Loss
IRL
—
- 14
-9
dB
1. Part internally input matched.
MRF5S4140HR3 MRF5S4140HSR3
2
RF Device Data
Freescale Semiconductor