MRF5S4140HR3 Datasheet, PDF (6/20 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 460 - 470 MHz
−25
V_DD = 28 Vdc, I_DQ = 1250 mA, f1 = 465 MHz
−30 ^{f2 = 467.5 MHz, Two−Tone Measurements}
−35
3rd Order
−40
−45
5th Order
−50
−55
7th Order
−60
10
100
200
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 28 Vdc, P_out = 100 W (PEP)
I_DQ = 1250 mA, Two−Tone Measurements
−10 (f1 + f2)/2 = Center Frequency of 465 MHz
−20
−30
3rd Order
−40
5th Order
7th Order
−50
0.1
1
10
60
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
60
P6dB = 53.57 dBm (227 W)
56
Ideal
P3dB = 52.99 dBm (198 W)
P1dB = 52.21 dBm (166 W)
52
Actual
48
44
V_DD = 28 Vdc, I_DQ = 1250 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 465 MHz
40
19
23
27
31
35
39
P_in, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus
Input Power
50
V_DD = 28 Vdc, I_DQ = 1250 mA, f = 465 MHz
N−CDMA IS−95 (Pilot, Sync, Paging
40 ^{Traffic Codes 8 Through 13)}
−35
ACPR
−43
25_C ^−30_C
30
−51
20
25_C
10
0
1
G_{ps TC = −30_C}
85_C
85_C
25_C
η_D
ALT1
−30_C
25_C
85_C
10
−59
−67
−75
60
P_out, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
MRF5S4140HR3 MRF5S4140HSR3
6
RF Device Data
Freescale Semiconductor