MRF5S21130HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 2200 MHz
f = 2080 MHz ^Zload
Z_o = 25 Ω
f = 2080 MHz
Z_source
f = 2200 MHz
V_DD = 28 Vdc, I_DQ = 1200 mA, P_out = 28 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2080
2110
2140
2170
2200
2.87 - j9.49
3.13 - j9.86
4.05 - j10.90
4.80 - j11.75
5.55 - j11.87
1.51 - j2.97
1.52 - j2.54
1.59 - j2.68
1.62 - j2.70
1.54 - j3.13
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z _source
Z _load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S21130HR3 MRF5S21130HSR3
7