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MRF5S21130HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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TYPICAL CHARACTERISTICS
35
VDD = 28 Vdc, IDQ = 1200 mA, f1 = 2135 MHz
30
f2 = 2145 MHz, 2âCarrier WâCDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel
ηD
Bandwidth, PAR = 8.5 dB @ 0.01%
25 Probability (CCDF)
IM3
ACPR
20
15
Gps
10
â20
109
â25
â30
108
â35
â40
107
â45
5
â50
0
â55
5
10 15 20 25 30 35 40 45
Pout, OUTPUT POWER (WATTS) AVG. (WâCDMA)
Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
106
100
120
140
160
180
200 220
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
1
0.1
0.01
0.001
WâCDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.0001
0
2
4
6
8
10
PEAKâTOâAVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
â20
3.84 MHz
â30
Channel BW
â40
â50
â60
â70
â80
â90
âACPR in +ACPR in
â100 âIM3 in
3.84 MHz BW 3.84 MHz BW
â110 3.84 MHz BW
â120
â25 â20 â15 â10 â5 0 5 10
f, FREQUENCY (MHz)
+IM3 in
3.84 MHz BW
15 20 25
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5S21130HR3 MRF5S21130HSR3
6
RF Device Data
Freescale Semiconductor
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