MRF5S21130HR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
14
35
G_ps
13
30
η_D
12
25
V_DD = 28 Vdc, P_out = 28 W (Avg.), I_DQ = 1200 mA
11
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
20
10 IRL
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
−28
−10
9
−32
−15
8 IM3
7 ^ACPR
−36
−20
−40
−25
6
−44
−30
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
@ P_out = 28 Watts Avg.
15
I_DQ = 1600 mA
14.5
1400 mA
14 _{1200 mA}
13.5 ^{1000 mA}
13 ^{800 mA}
12.5
12
11.5
11
1
V_DD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−25
−30
−35
I_DQ = 1600 mA
−40
1400 mA
1200 mA
−45
−50 _{800 mA}
−55
−60
−65
1
1000 mA
10
V_DD = 28 Vdc
f1 = 2135 MHz,
f2 = 2145 MHz
Two−Tone Measurement,
10 MHz Tone Spacing
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
−25
3rd Order
−30
−35
−40 _{5th Order}
−45
7th Order
−50
V_DD = 28 Vdc, P_out = 130 W (PEP), I_DQ = 1200 mA
−55 Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
57
Ideal
P3dB = 52.58 dBm (181.1 W)
55
P1dB = 51.88 dBm (154.17 W)
53
51
Actual
49
V_DD = 28 Vdc, I_DQ = 1200 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
47
33 34 35 36 37 38 39 40 41 42 43 44 45 46
P_in, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
RF Device Data
Freescale Semiconductor
MRF5S21130HR3 MRF5S21130HSR3
5