MRF5P20180HR6_06 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

f = 1930 MHz
Z_load
f = 1990 MHz
Z_o = 25 Ω
f = 1990 MHz
f = 1930 MHz
Z_source
V_DD = 28 V, I_DQ = 1600 mA, P_out = 38 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1930
1960
1990
6.54 - j16.04
9.70 - j17.92
13.88 - j20.46
4.06 - j5.56
3.70 - j5.48
3.64 - j5.76
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
−
Matching
Network
−
Z _source
+
Z _load
Figure 12. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF5P20180HR6
7