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MRF5P20180HR6_06 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |||
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TYPICAL CHARACTERISTICS
15
40
14 Gps
35
13
ηD
VDD = 28 Vdc, Pout = 38 W (Avg.), IDQ = 1600 mA
30
12
25
11
2âCarrier WâCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
20
10
IRL
9
PAR = 8.5 dB @ 0.01% Probability (CCDF)
â20
â10
â25
â15
8
â30
â20
7
IM3
â35
â25
6
ACPR
5
â40
â30
â45
â35
1840 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
@ Pout = 38 Watts Avg.
16
15.5 IDQ = 2400 mA
15 2000 mA
14.5 1600 mA
14
1200 mA
13.5
13
12.5 800 mA
12
11.5
11
1
VDD = 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
TwoâTone Measurements, 10 MHz Tone Spacing
10
100
1000
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
â20
VDD = 28 Vdc
â25 f1 = 1955 MHz, f2 = 1965 MHz
TwoâTone Measurements, 10 MHz Tone Spacing
â30
IDQ = 800 mA
â35
2400 mA
â40
â45
â50
2000 mA
â55
1600 mA
1200 mA
â60
1
10
100
1000
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
â20
â25
â30 3rd Order
â35
â40 5th Order
â45
7th Order
â50
VDD = 28 Vdc, Pout = 180 W (PEP), IDQ = 1600 mA
â55 TwoâTone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
â60
0.1
1
10
100
TWOâTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
RF Device Data
Freescale Semiconductor
58
57
Ideal
56
P3dB = 54 dBm (251 W)
55
54
P1dB = 53.5 dBm (224 W)
53
Actual
52
51
50
49
48
47
VDD = 28 Vdc, IDQ = 1600 mA
46
Pulsed CW, 8 μsec(on), 1 msec(off)
45
f = 1960 MHz
44
30 32 34 36 38 40 42 44 46
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MRF5P20180HR6
5
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