MRF5P20180HR6_06 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
35
V_DD = 28 Vdc, I_DQ = 1600 mA
30 ^{f1 = 1955 MHz, f2 = 1965 MHz}
2 x W−CDMA
25 ^{10 MHz @ 3.84 MHz Channel Bandwidth}
PAR = 8.5 dB @ 0.01% Probability (CCDF)
20
15
10
−20
η_{D −25}
−30
IM3
−35
ACPR
−40
G_ps
−45
5
−50
0
−55
1
10
100
P_out, OUTPUT POWER (WATTS, Avg.) W−CDMA
Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
10¹⁰
10⁹
10⁸
10⁷
100
120
140
160
180
200 220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
1
0.1
0.01
0.001
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
−20
3.84 MHz
−30
Channel BW
−40
−50
−60
−70
−80
−90
−100 _{−IM3 in}
−ACPR in +ACPR in
3.84 MHz BW 3.84 MHz BW
−110 ^{3.84 MHz BW}
−120
−25 −20 −15 −10 −5 0 5 10
+IM3 in
3.84 MHz BW
15 20 25
f, FREQUENCY (MHz)
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5P20180HR6
6
RF Device Data
Freescale Semiconductor