MRF19125R3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
14
I_DQ = 1700 mA
13.5
1500 mA
1300 mA
1100 mA
13
12.5
12
4
900 mA
10
V_DD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
100 150
P_out, OUTPUT POWER (WATTS) PEP
Figure 9. Two-Tone Power Gain versus
Output Power
40
−5
η
35
− 10
30
− 15
IRL
25
− 20
V_DD = 26 Vdc
20
P_out = 125 W (PEP)
− 25
I_DQ = 1300 mA
100 kHz Tone Spacing
15
IMD
− 30
10
G_ps
− 35
1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 10. Two-Tone Broadband Performance
10¹⁰
− 25
− 30
V_DD = 26 Vdc
− 35
I_DQ = 1300 mA
f = 1960 MHz
− 40
3rd Order
5th Order
− 45
− 50
7th Order
− 55
100
1000
5000
Df, TONE SPACING (kHz)
Figure 11. Intermodulation Distortion Products
versus Two - Tone Tone Spacing
10⁹
10⁸
10⁷
90 100 110 120 130 140 150 160 170 180 190 200 210
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF19125R3 MRF19125SR3
7