MRF19125R3 Datasheet, PDF (11/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

B
B
(FLANGE)
K
H
E
A
PACKAGE DIMENSIONS
G4
1
2X Q
bbb M T A M B M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M − 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
3
2
D
bbb M T A M B M
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.535 0.545
C 0.147 0.200
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.175 0.205
M 0.872 0.888
N 0.871 0.889
Q .118 .138
R 0.515 0.525
S 0.515 0.525
aaa 0.007 REF
bbb 0.010 REF
ccc 0.015 REF
MILLIMETERS
MIN MAX
33.91 34.16
13.6 13.8
3.73 5.08
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.44 5.21
22.15 22.55
19.30 22.60
3.00 3.51
13.10 13.30
13.10 13.30
0.178 REF
0.254 REF
0.381 REF
A
(FLANGE)
C
T
SEATING
PLANE
STYLE 1:
PIN 1. DRAIN
2. GATE
F
3. SOURCE
CASE 465B - 03
ISSUE D
NI - 880
MRF19125R3
B
1
B
(FLANGE)
K
2
D
bbb M T A M B M
H
E
A
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
C
A
(FLANGE)
T
SEATING
PLANE
RF Device Data
Freescale Semiconductor
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M − 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
F
CASE 465C - 02
ISSUE D
NI - 880S
MRF19125SR3
INCHES
DIM MIN MAX
A 0.905 0.915
B 0.535 0.545
C 0.147 0.200
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.872 0.888
N 0.871 0.889
R 0.515 0.525
S 0.515 0.525
aaa 0.007 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
22.99 23.24
13.60 13.80
3.73 5.08
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
22.15 22.55
19.30 22.60
13.10 13.30
13.10 13.30
0.178 REF
0.254 REF
0.381 REF
MRF19125R3 MRF19125SR3
11