MRF19125R3 Datasheet, PDF(3/12 Page) Freescale Semiconductor, Inc

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MRF19125R3 Datasheet, PDF (3/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture)

Two - Tone Common - Source Amplifier Power Gain

Gps

13.5

(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,

f2 = 1990 MHz, Tone Spacing = 100 kHz)

Two - Tone Drain Efficiency

Î·

(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,

f2 = 1990 MHz, Tone Spacing = 100 kHz)

Third Order Intermodulation Distortion

IMD

- 30

dBc

(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,

f2 = 1990 MHz, Tone Spacing = 100 kHz)

Input Return Loss

IRL

- 13

(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,

f2 = 1990 MHz, Tone Spacing = 100 kHz)

Pout, 1 dB Compression Point

(VDD = 26 Vdc, IDQ = 1300 mA, f = 1990 MHz)

P1dB

130

RF Device Data

Freescale Semiconductor

MRF19125R3 MRF19125SR3

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