|
MRF7S19100NR1_08 Datasheet, PDF (6/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
|
◁ |
TYPICAL CHARACTERISTICS
19
33
18
Gps
32
17
31
ηD
16
30
VDD = 28 Vdc, Pout = 29 W (Avg.), IDQ = 1000 mA
15
SingleâCarrier WâCDMA, 3.84 MHz Channel
29
â10
IRL Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
14
â1.4
â15
13
â1.5
â20
12
PARC
11
â1.6
â25
â1.7
â30
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 29 Watts Avg.
19
40
18 ηD
39
17
38
Gps
16
VDD = 28 Vdc, Pout = 47 W (Avg.), IDQ = 1000 mA
37
SingleâCarrier WâCDMA, 3.84 MHz Channel
15
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) 36
â10
IRL
14
â3
â15
13
â3.1
â20
12
â3.2
â25
PARC
11
â3.3
â30
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 47 Watts Avg.
20
IDQ = 1500 mA
19
1250 mA
1000 mA
18
750 mA
17
16
500 mA
15
1
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
TwoâTone Measurements, 10 MHz Tone Spacing
10
100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
â10
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
TwoâTone Measurements, 10 MHz Tone Spacing
â20
â30
IDQ = 500 mA
â40
1500 mA
1000 mA
â50
1250 mA
750 mA
â60
1
10
100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S19100NR1 MRF7S19100NBR1
6
RF Device Data
Freescale Semiconductor
|
▷ |