MRF7S19100NR1_08 Datasheet, PDF(3/18 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF7S19100NR1_08 Datasheet, PDF (3/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Table 5. Electrical Characteristics (TC = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Typical Performances (In Freescale Test Fixture, 50 Î¿hm system) VDD = 28 Vdc, IDQ = 1000 mA, 1930 - 1990 MHz Bandwidth

Video Bandwidth @ 100 W PEP Pout where IM3 = - 30 dBc

(Tone Spacing from 100 kHz to VBW)

VBW

ÎIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both

sidebands)

Gain Flatness in 60 MHz Bandwidth @ Pout = 29 W Avg.

Average Group Delay @ Pout = 100 W CW, f = 1960 MHz

Part - to - Part Insertion Phase Variation @ Pout = 100 W CW,

f = 1960 MHz, Six Sigma Window

Delay

2.15

ÎÎ¦

28.8

Gain Variation over Temperature

( - 30Â°C to +85Â°C)

ÎG

0.019

Output Power Variation over Temperature

( - 30Â°C to +85Â°C)

ÎP1dB

0.015

Unit

MHz

Â°

dB/Â°C

dBm/Â°C

RF Device Data

Freescale Semiconductor

MRF7S19100NR1 MRF7S19100NBR1

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