MRF7S19100NR1_08 Datasheet, PDF (17/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
3
Date
Jan. 2008
Description
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
• Corrected V_DS to V_DD in the RF test condition voltage callout for V_GS(Q), On Characteristics table, p. 2
• Updated Typical Performance table to provide better definition of characterization attributes, p. 3
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 4
• Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to better match the
device’s capabilities, p. 7
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps² and listed
operating characteristics and location of MTTF calculator for device, p. 8
• Updated Fig. 13, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test
Signal, to better represent production test signal, p. 8
• Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p.11 - 13. Added pin numbers 1 through 4
on Sheet 1.
• Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 14 - 16. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
• Added Product Documentation and Revision History, p. 17
RF Device Data
Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1
17