MRF6V4300NBR1 Datasheet, PDF (6/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
23
22
21
20
19
50 V
40 V ^{45 V}
18
35 V
17
25 V ^{30 V}
V_DD = 20 V
16
I_DQ = 900 mA
f = 450 MHz
0 50 100 150 200 250 300 350 400
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
60
T_C = −30_C
55
25_C
85_C
50
45
40
V_DD = 50 Vdc
I_DQ = 900 mA
f = 450 MHz
35
15
20
25
30
35
40
P_in, INPUT POWER (dBm)
Figure 11. Power Output versus Power Input
25
80
24
25_C
70
23
T_C = −30_C
60
G_ps
22
85_C
50
25_C
21
−30_C
40
85_C
20
30
19
η_D
18
10
V_DD = 50 Vdc
I_DQ = 900 mA
f = 450 MHz
100
20
10
500
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
10⁸
10⁷
10⁶
10⁵
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 50 Vdc, P_out = 300 W, and η_D = 60%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRF6V4300NR1 MRF6V4300NBR1
6
RF Device Data
Freescale Semiconductor