MRF6V4300NBR1 Datasheet, PDF (2/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
R_θJC
0.24
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
10
Drain- Source Breakdown Voltage
(I_D = 150 mA, V_GS = 0 Vdc)
V_(BR)DSS
110
—
—
Zero Gate Voltage Drain Leakage Current
(V_DS = 50 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
50
Zero Gate Voltage Drain Leakage Current
(V_DS = 100 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
2.5
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 800 μAdc)
V_GS(th)
0.9
1.65
2.4
Gate Quiescent Voltage
(V_DD = 50 Vdc, I_D = 900 mAdc, Measured in Functional Test)
V_GS(Q)
1.9
2.7
3.4
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
V_DS(on)
—
0.25
—
Dynamic Characteristics
Reverse Transfer Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
2.8
—
Output Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
105
—
Input Capacitance
(V_DS = 50 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C_iss
—
304
—
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 900 mA, P_out = 300 W, f = 450 MHz, CW
Power Gain
G_ps
20
22
24
Drain Efficiency
η_D
58
60
—
Input Return Loss
IRL
—
- 16
-9
μAdc
Vdc
μAdc
mA
Vdc
Vdc
Vdc
pF
pF
pF
dB
%
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
MRF6V4300NR1 MRF6V4300NBR1
2
RF Device Data
Freescale Semiconductor