MRF6V4300NBR1 Datasheet, PDF (5/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

1000
C_iss
TYPICAL CHARACTERISTICS
100
100
C_oss
Measured with ±30 mV(rms)ac @ 1 MHz
10
10
C_rss
V_GS = 0 Vdc
1
0
10
20
30
40
50
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain - Source Voltage
10
9
V_GS = 3 V
8
7
6
2.75 V
5
2.63 V
4
2.5 V
3
2
1
2.25 V
0
0
20
40
60
80
100
120
DRAIN VOLTAGE (VOLTS)
Figure 6. DC Drain Current versus Drain Voltage
0
−5 V_DD = 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz
−10 ^{Two−Tone Measurements, 100 kHz Tone Spacing}
−15
−20
−25
I_DQ = 450 mA
−30
−35 650 mA
−40
900 mA
−45
−50 1350 mA
−55
−60 ^{1125 mA}
10
100
600
P_out, OUTPUT POWER (WATTS) PEP
Figure 8. Third Order Intermodulation Distortion
versus Output Power
T_C = 25°C
1
1
10
100
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
23
22
I_DQ = 1350 mA
21
900 mA ^{1125 mA}
20
450 mA ^{650 mA}
19
V_DD = 50 Vdc
f = 450 MHz
18
10
100
600
P_out, OUTPUT POWER (WATTS) CW
Figure 7. CW Power Gain versus Output Power
60
59
P3dB = 56.06 dBm (403 W)
Ideal
58
57
P1dB = 55.15 dBm (327 W)
56
Actual
55
54
53
52
51
V_DD = 50 Vdc, I_DQ = 900 mA
f = 450 MHz
50
28 29 30 31 32 33 34 35 36 37 38
P_in, INPUT POWER (dBm)
Figure 9. CW Output Power versus Input Power
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
5