MRF6S9130HR3_08 Datasheet, PDF (6/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
0
V_DD = 28 Vdc, P_out = 130 W (PEP), I_DQ = 950 mA
Two−Tone Measurements
−10 _{(f1 + f2)/2 = Center Frequency of 880 MHz}
−20 _{3rd Order}
−30
5th Order
−40
−50 7th Order
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
56
55.5
Ideal
55
P3dB = 52.54 dBm (179.47 W)
54.5
54
53.5 P1dB = 51.8 dBm (151.36 W)
53
52.5
52
Actual
51.5
51
V_DD = 28 Vdc, I_DQ = 950 mA
50.5
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
50
31 31.5 32 32.5 33 33.5 34 34.5 35 35.5 36 36.5 37
P_in, INPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus
Input Power
60
−30
V_DD = 28 Vdc, I_DQ = 950 mA, f = 880 MHz
N−CDMA IS−95, Pilot, Sync, Paging
50 _{Traffic Codes 8 Through 13}
−35
40
−40
30
−45
20 ^Gps
−50
10 _ηD
ACPR
−55
0
−60
1
10
100 150
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. Single - Carrier N - CDMA ACPR, Power
Gain and Drain Efficiency versus Output Power
20
70
19
60
G_ps
18
50
17
40
16
30
15
14
η_D
13
1
10
20
V_DD = 28 Vdc
I_DQ = 950 mA ₁₀
f = 880 MHz
0
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
20
19.5
19
18.5
18
17.5
17
16.5
32 V
16
28 V
15.5
V_DD = 24 V
15
14.5
14
0
I_DQ = 950 mA
f = 880 MHz
50
100
150
200
250
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6S9130HR3 MRF6S9130HSR3
6
RF Device Data
Freescale Semiconductor