MRF6S9130HR3_08 Datasheet, PDF (1/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
Document Number: MRF6S9130H
Rev. 5, 8/2008
MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device
Migration PCN12895 for more details.
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V_DD = 28 Volts,
I_DQ = 950 mA, P_out = 27 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.2 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 48.1 dBc in 30 kHz Bandwidth
GSM Application
• Typical GSM Performance: V_DD = 28 Volts, I_DQ = 950 mA, P_out =
130 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 18 dB
Drain Efficiency — 63%
GSM EDGE Application
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 950 mA,
P_out = 56 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain — 18.5 dB
Drain Efficiency — 44%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 1.5% rms
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S9130HR3
MRF6S9130HSR3
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S9130HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S9130HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
Table 2. Thermal Characteristics
Characteristic
V_DSS
V_GS
T_stg
T_C
T_J
Symbol
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Value ^(2,3)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 27 W CW
R_θJC
0.45
0.51
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9130HR3 MRF6S9130HSR3
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