MRF6S9130HR3_08 Datasheet, PDF (5/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
20
34
19.5
32
19
30
18.5 _ηD
28
V_DD = 28 Vdc, P_out = 27 W (Avg.)
18
G_ps
17.5
IRL
I_DQ = 950 mA, N−CDMA IS−95 Pilot, Sync, ²⁶
Paging, Traffic Codes 8 Through 13
−44
−5
17
−46
−15
16.5
16 ^ACPR
−48
−25
−50
−35
15.5
−52
−45
15
−54
−55
840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P_out = 27 Watts Avg.
20
47
19.5
44
19
41
18.5 ^ηD
38
18
17.5
G_ps
V_DD = 28 Vdc, P_out = 54 W (Avg.)
35
I_DQ = 950 mA, N−CDMA IS−95 Pilot, Sync
−34
−5
Paging, Traffic Codes 8 Through 13
17
IRL
−36
−10
16.5
16 ^ACPR
−38
−15
−40
−20
15.5
−42
−25
15
−44
−30
840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P_out = 54 Watts Avg.
20
I_DQ = 1400 mA
19 ^{1100 mA}
950 mA
18
700 mA
17
500 mA
16
V_DD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
15
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
I_DQ = 500 mA
700 mA
−40
−50
−60
1
1100 mA
10
1400 mA
950 mA
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S9130HR3 MRF6S9130HSR3
5