MRF6S27085HR3_08 Datasheet, PDF (6/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
0
V_DD = 28 Vdc, P_out = 85 W (PEP), I_DQ = 900 mA
Two−Tone Measurements
−10 _{(f1 + f2)/2 = Center Frequency of 2645 MHz}
−20
−30 ^{3rd Order}
−40 ^{5th Order}
−50 _{7th Order}
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
56
55
P3dB = 51.72 dBm (148.54 W) ^Ideal
54
53
P1dB = 51 dBm (126.74 W)
52
51
Actual
50
49
48
V_DD = 28 Vdc, I_DQ = 900 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
47
f = 2645 MHz
46
30 31 32 33 34 35 36 37 38 39 40
P_in, INPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus
Input Power
45
−30
V_DD = 28 Vdc, I_DQ = 900 mA, f = 2645 MHz
ACPR
40 Single−Carrier N−CDMA, 1.2288 MHz
−35
Channel Bandwidth, PAR = 9.8 dB
η_D
35 _{@ 0.01% Probability (CCDF)}
−40
30
ALT1
−45
25
−50
20
−55
G_ps
15
−60
10
−65
5
10
−70
100
P_out, OUTPUT POWER (WATTS) AVG. W−CDMA
Figure 9. Single - Carrier N - CDMA ACPR, ALT1,
Power Gain and Drain Efficiency versus Output
Power
20
45
17.5
40
G_ps
15
35
12.5
30
10
25
7.5
20
5
η_D
2.5
0
15
V_DD = 28 Vdc, I_DQ = 900 mA ₁₀
f = 2645 MHz
5
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
16
15
32 V
14
28 V
13
V_DD = 24 V
12
I_DQ = 900 mA
f = 2645 MHz
11
1
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6S27085HR3 MRF6S27085HSR3
6
RF Device Data
Freescale Semiconductor