MRF6S27085HR3_08 Datasheet, PDF (5/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
16.2
16 _{VDD = 28 Vdc, Pout = 20 W (Avg.)}
I_DQ = 900 mA, Single−Carrier N−CDMA
15.8
25
η_{D 24}
23
15.6 1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01%
15.4 Probability (CCDF)
15.2
22
−10
G_ps
−42
−12
IRL
−14
−46
−16
15
ACPR ^−50
−18
−20
14.8
−54
−22
ALT1
−24
14.6
−58
−26
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ 20 Watts Avg.
15.2
η_D
15
38
V_DD = 28 Vdc, P_out = 45 W (Avg.)
I_DQ = 900 mA, Single−Carrier N−CDMA ₃₆
14.8 ^Gps
1.2288 MHz Channel Bandwidth 34
PAR = 9.8 dB @ 0.01%
14.6
Probability (CCDF)
32
−10
14.4
IRL
14.2
−32
−12
−14
−36
−16
14 ^ACPR
−40
−18
−20
13.8
−44
−22
ALT1
13.6
−24
−48
−26
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ 45 Watts Avg.
18
17
I_DQ = 1340 mA
1240 mA
16
900 mA
15
675 mA
14
13
440 mA
12
1
V_DD = 28 Vdc
f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements
2.5 MHz Tone Spacing
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−20
V_DD = 28 Vdc
f1 = 2643.75 MHz, f2 = 2646.25 MHz
−30
Two−Tone Measurements
2.5 MHz Tone Spacing
1340 mA
−40 ^{IDQ = 440 mA}
1240 mA
−50
900 mA
−60
675 mA
0.1
1
10
100 300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
5