MRF6S27085HR3_08 Datasheet, PDF (2/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 250 μAdc)
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_D = 900 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 2.2 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
I_DSS
—
I_DSS
—
I_GSS
—
V_GS(th)
1
V_GS(Q)
2
V_DS(on)
—
C_rss
—
—
10
μAdc
—
1
μAdc
—
1
μAdc
2
3
Vdc
2.8
4
Vdc
0.21
0.3
Vdc
2.8
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 900 mA, P_out = 20 W Avg. N - CDMA, f = 2660 MHz,
Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
14
15.5
17
dB
Drain Efficiency
η_D
21
23.5
—
%
Adjacent Channel Power Ratio
ACPR
—
- 48
- 45
dBc
Input Return Loss
IRL
—
- 13
-9
dB
1. Part is internally matched both on input and output.
MRF6S27085HR3 MRF6S27085HSR3
2
RF Device Data
Freescale Semiconductor