MRF6S27015NR1_07 Datasheet, PDF (6/17 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
− 15
−20 ^{VDD = 28 Vdc, IDQ = 160 mA}
f1 = 2595 MHz, f2 = 2605 MHz
−25 Two −Tone Measurements, 10 MHz Tone Spacing
− 30
− 35
−40 ^{3rd Order}
− 45
−50 _{5th Order}
− 55
− 60
− 65
7th Order
1
10
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
− 25
V_DD = 28 Vdc, P_out = 15 W (PEP)
−30 ^IDQ ^{= 160 mA}
IM3 −U
−35 _{Two −Tone Measurements}
IM3 −L
(f1 + f2)/2 = Center Frequency of 2600 MHz
− 40
IM5 −U
− 45
IM5 −L
− 50
IM7 −U
IM7 −L
− 55
− 60
1
10
100
TWO −TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
50
49
P6dB = 44.3 dBm (27 W)
Ideal
48
47
P3dB = 43.7 dBm (23 W)
46
45 _{P1dB = 43 dBm (20 W)}
44
43
Actual
42
V_DD = 28 Vdc, I_DQ = 160 mA
41
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2600 MHz
40
26 27 28 29 30 31 32 33 34 35 36
P_in, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
50
− 20
45
V_DD = 28 Vdc, I_DQ = 160 mA, f = 2600 MHz
Single −Carrier W−CDMA, 3.84 MHz Channel
− 25
40 ^{Bandwidth, PAR = 8.5 dB @ 0.01%}
− 30
Probability (CCDF)
35
− 35
30
− 40
ALT1
25
ACPR
η_D
− 45
20
− 50
15
G_ps ^−55
10
− 60
5
1
− 65
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier W - CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
MRF6S27015NR1 MRF6S27015GNR1
6
RF Device Data
Freescale Semiconductor