MRF6S27015NR1_07 Datasheet, PDF (5/17 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
16
24
15
23
14 ^Gps
22
13
η_D
12
V_DD = 28 Vdc, P_out = 3 W (Avg.)
21
I_DQ = 160 mA, Single−Carrier W−CDMA
20
−5
11
IRL
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
− 30
− 10
10 _ACPR
− 40
− 15
9
− 50
− 20
ALT1
8
− 60
− 25
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance
@ P_out = 3 Watts Avg.
15
32
14 _Gps
13
12 _ηD
11
IRL
10
9 ^ACPR
31
30
V_DD = 28 Vdc, P_out = 6 W (Avg.)
I_DQ = 160 mA, Single−Carrier W−CDMA
29
3.84 MHz Channel Bandwidth
28
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−5
− 30
− 10
− 40
− 15
8 _ALT1
− 50
− 20
7
− 60
− 25
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance
@ P_out = 6 Watts Avg.
16
I_DQ = 240 mA
190 mA
15
160 mA
14 _{130 mA}
13 80 mA
12
1
V_DD = 28 Vdc
f1 = 2592 MHz, f2 = 2605 MHz
Two −Tone Measurements
10
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 10
−15 ^{VDD = 28 Vdc}
f1 = 2595 MHz, f2 = 2605 MHz
−20 _{Two −Tone Measurements}
− 25
−30 ^IDQ ^{= 80 mA}
− 35
240 mA
− 40
− 45
− 50
130 mA
− 55
160 mA
190 mA
− 60
1
10
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
5