MRF6S27015NR1_07 Datasheet, PDF (1/17 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2000 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical Single - Carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ =
160 mA, P_out = 3 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 22%
ACPR @ 5 MHz Offset — - 45 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MRF6S27015N
Rev. 1, 6/2007
MRF6S27015NR1
MRF6S27015GNR1
2300 - 2700 MHz, 3 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S27015NR1
CASE 1265A - 02, STYLE 1
TO - 270 - 2 GULL
PLASTIC
MRF6S27015GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
V_GS
T_stg
T_C
T_J
- 0.5, +68
Vdc
- 0.5, +12
Vdc
- 65 to +175
°C
150
°C
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 7.5 W Avg., Two - Tone
Case Temperature 79°C, 3 W CW
R_θJC
°C/W
2.0
2.2
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006-2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
1