MRF6522-70R3_08 Datasheet, PDF (6/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
--10
18
G_ps
--15
17
--20
16
--25
910 920
IRL
930
940
950
f, FREQUENCY (MHz)
V_DS = 26 Vdc
I_DQ = 400 mA
15
960 970
Figure 11. Performance in Broadband Circuit (at Small Signal)
MRF6522--70R3
6
RF Device Data
Freescale Semiconductor