MRF6522-70R3_08 Datasheet, PDF (2/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 3. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics
Drain--Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 20 µAdc)
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate--Source Leakage Current
(V_GS = 20 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
65
I_DSS
—
I_GSS
—
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 µAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 400 mAdc)
Drain--Source On--Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2 Adc)
V_GS(th)
2
V_GS(Q)
3
V_DS(on)
—
g_fs
2
Dynamic Characteristics
Input Capacitance ⁽¹⁾
(V_DS = 26 Vdc, V_GS = 0, f = 1 MHz)
Output Capacitance
(V_DS = 26 Vdc, V_GS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(V_DS = 26 Vdc, V_GS = 0, f = 1 MHz)
C_iss
—
C_oss
41
C_rss
2.4
Functional Tests (In Freescale Test Fixture)
Output Power
(V_DD = 26 Vdc, I_DQ = 400 mA, f = 940 MHz)
Common--Source Amplifier Power Gain @ P1dB (Min)
(V_DD = 26 Vdc, I_DQ = 400 mA, f = 940 MHz)
Drain Efficiency @ P_out = 50 W
(V_DD = 26 Vdc, I_DQ = 400 mA, f = 940 MHz)
Drain Efficiency @ P1dB
(V_DD = 26 Vdc, I_DQ = 400 mA, f = 940 MHz)
Input Return Loss @ P_out = 50 W
(V_DD = 26 Vdc, I_DQ = 400 mA, f = 940 MHz)
1. Value excludes the input matching.
P1dB
73
G_ps
14
η₁
47
η₂
—
IRL
—
Typ
—
—
—
3
4
0.15
3
130
47
3
80
16
51
58
—
Max
Unit
—
Vdc
10
µAdc
1
µAdc
4
Vdc
5
Vdc
0.6
Vdc
—
S
—
pF
52
pF
3.4
pF
—
W
18
dB
—
%
—
%
--15
dB
MRF6522--70R3
2
RF Device Data
Freescale Semiconductor