MRF6522-70R3_08 Datasheet, PDF (4/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

17.5
I_DQ = 600 mA
TYPICAL CHARACTERISTICS
18.0
17.8 ^{IDQ = 600 mA}
17.0
17.6 500 mA
17.4 400 mA
16.5
500 mA
400 mA
200 mA _{300 mA}
17.2
17.0 ^{300 mA}
16.0
16.8 _{200 mA}
15.5
V_DS = 26 Vdc
f = 921 MHz
16.6
16.4
V_DS = 26 Vdc
f = 960 MHz
16.2
15.0
16.0
10
100
10
100
P_out, OUTPUT POWER (WATTS)
P_out, OUTPUT POWER (WATTS)
Figure 3. Power Gain versus Output Power
Figure 4. Power Gain versus Output Power
115
P_in = 5.0 W
105
4.0 W
3.0 W
95
2.0 W
85
75
65
55
I_DQ = 400 mA
f = 921 MHz
45
18 19 20 21 22 23 24 25 26 27 28
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 5. Output Power versus Supply Voltage
105
95
P_in = 5.0 W
85
4.0 W
3.0 W
75
2.0 W
65
55
45
I_DQ = 400 mA
f = 960 MHz
35
18 19 20 21 22 23 24 25 26 27 28
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
MRF6522--70R3
4
80
80
70
70
60
60
50
50
η
40
40
30
30
P_out
20
20
V_DS = 26 Vdc
10
I_DQ = 400 mA
10
f = 921 MHz
0
0
0
0.5
1.0
1.5
2.0
P_in, INPUT POWER (WATTS)
Figure 7. Efficiency and Output Power
versus Input Power
RF Device Data
Freescale Semiconductor