MRF5S19130HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – Suitable for TDMA, CDMA and multicarrier amplifier applications.

TYPICAL CHARACTERISTICS
35
V_DD = 28 Vdc, I_DQ = 1200 mA
30 ^{f1 = 1958.75 MHz, f2 = 1961.25 MHz}
2 x N−CDMA, 2.5 MHz @
25 ^{1.2288 MHz Channel Bandwidth}
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
20
−30
IM3
η_D ^−35
−40
ACPR
−45
15
G_ps −50
10
−55
5
−60
0
1
−65
10
P_out, OUTPUT POWER (WATTS) AVG. (N−CDMA)
Figure 8. 2 - Carrier N - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
1.2288 MHz
−10
Channel BW
−20
−IM3 @
−30
1.2288 MHz
Integrated BW
−40
+IM3 @
1.2288 MHz
Integrated BW
−50
−60
−70
−ACPR @ 30 kHz +ACPR @ 30 kHz
Integrated BW
Integrated BW
−80
−90
−100
−7.5 −6 −4.5 −3 −1.5 0
1.5 3
4.5 6 7.5
f, FREQUENCY (MHz)
Figure 9. 2 - Carrier N - CDMA Spectrum
10⁹
10⁸
10⁷
10⁶
10⁵
100
120
140
160
180
200 220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 10. MTTF Factor versus Junction
Temperature
MRF5S19130HR3 MRF5S19130HSR3
6
RF Device Data
Freescale Semiconductor