MRF5S19130HR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – Suitable for TDMA, CDMA and multicarrier amplifier applications.

TYPICAL CHARACTERISTICS
15
40
14
35
13 ^Gps
30
12 η_D
11
10 _IRL
9
25
V_DD = 28 Vdc, P_out = 26 W (Avg.), I_DQ = 1200 mA ₂₀
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
−10
−5
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) _−20
−10
8 _IM3
−30
−15
7
ACPR
6
−40
−20
−50
−25
5
−60
−30
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
16
V_DD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
15
Two−Tone Measurement, 2.5 MHz Tone Spacing
I_DQ = 1800 mA
14
1500 mA
13 _{1200 mA}
12 ^{900 mA}
11
600 mA
10
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−20
−25
−30 3rd Order
−35
−40 _{5th Order}
−45
7th Order
−50
−55
−60
0.1
V_DD = 28 Vdc, P_out = 130 W (PEP), I_DQ = 1200 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
1
10
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
RF Device Data
Freescale Semiconductor
−25
V_DD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
−30 ^{Two−Tone Measurement, 2.5 MHz Tone Spacing}
−35
I_DQ = 1800 mA
−40
600 mA
−45
−50
1500 mA
1200 mA
−55
900 mA
−60
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
60
59
58
Ideal
57
56
P3dB = 53.11 dBm (205.57 W)
55
P1dB = 52.54 dBm (179.61 W)
54
53
Actual
52
51
50
V_DD = 28 Vdc, I_DQ = 1200 mA
Pulsed CW, 8 µsec (on), 1 msec (off)
49
Center Frequency = 1960 MHz
48
35 36 37 38 39 40 41 42 43 44 45
P_in, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S19130HR3 MRF5S19130HSR3
5