MRF5S19130HR3 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – Suitable for TDMA, CDMA and multicarrier amplifier applications.

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for V_DD = 28 Volts, I_DQ =
1200 mA, P_out = 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 13 dB
Drain Efficiency — 25%
IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 51 dB @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
110 Watts CW Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 V Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S19130H
Rev. 1, 12/2004
MRF5S19130HR3
MRF5S19130HSR3
1990 MHz, 26 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19130HR3
Table 1. Maximum Ratings
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19130HSR3
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
P_D
- 0.5, +65
- 0.5, +15
438
2.50
Storage Temperature Range
Operating Junction Temperature
CW Operation
T_stg
- 65 to +150
T_J
200
CW
110
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 115 W CW
Case Temperature 78°C, 26 W CW
R_θJC
0.40
0.46
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
1