MRF18090BR3 Datasheet, PDF (6/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 1805 MHz
Z_load
f = 1990 MHz
Z_o = 10 Ω
f = 1805 MHz
f = 1990 MHz
Z_source
V_DD = 26 V, I_DQ = 750 mA, P_out = 90 Watts (CW)
f
MHz
Z_source
Ω
Z_load
Ω
1805
1880
1.10 - j5.85
1.56 - j6.75
1.15 - j2.16
1.13 - j2.60
1930
2.05 - j8.00
1.30 - j2.23
1990
2.30 - j7.30
0.82 - j2.90
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _source
Z _load
Figure 10. Large Signal Source and Load Impedance
MRF18090BR3 MRF18090BSR3
6
RF Device Data
Freescale Semiconductor