MRF18090BR3 Datasheet, PDF(2/8 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF18090BR3 Datasheet, PDF (2/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain- Source Breakdown Voltage

(VGS = 0 Vdc, ID = 100 Î¼Adc)

Zero Gate Voltage Drain Current

(VDS = 26 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 750 mAdc)

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 1 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 3 Adc)

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 26 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture)

Common- Source Amplifier Power Gain @ 90 W (1)

(VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz)

Drain Efficiency @ 90 W (1)

(VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz)

Input Return Loss (1)

(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,

f = 1930 - 1990 MHz)

V(BR)DSS

IDSS

IGSS

VGS(Q)

2.5

VDS(on)

gfs

Crss

Gps

Î·

IRL

3.7

0.1

7.2

4.2

13.5

Vdc

Î¼Adc

4.5

Vdc

- 10

1. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring batch - to - batch

consistency.

MRF18090BR3 MRF18090BSR3

RF Device Data

Freescale Semiconductor

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