MRF18090BR3 Datasheet, PDF (5/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
16
I_DQ = 1000 mA
15
750 mA
14
13
500 mA
12
300 mA
11
V_DD = 26 Vdc
f = 1990 MHz
10
0.1
1
10
100
1000
P_out, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus
Output Power
140
120
I_DQ = 750 mA
f = 1990 MHz
100
P_in = 5 W
80
60
2W
40
1W
20
0
12 14 16 18 20 22 24 26 28 30 32
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
120
P_in = 5 W
100
80
60
2W
V_DD = 26 Vdc
40
I_DQ = 750 mA
1W
20
0
1.91
1.93
1.95
1.97
1.99
2.01
f, FREQUENCY (GHz)
Figure 7. Output Power versus Frequency
16
14
120
60
h
100
50
P_out
80
40
60
30
40
20
V_DD = 26 Vdc
20
I_DQ = 750 mA 10
f = 1990 MHz
0
0
0
1
2
3
4
5
6
P_in, INPUT POWER (WATTS)
Figure 8. Output Power and Efficiency
versus Input Power
0
G_ps
−5
12
−10
IRL
10
−15
8
6
1.88 1.90
1.92 1.94 1.96 1.98
f, FREQUENCY (GHz)
−20
V_DD = 26 Vdc
I_DQ = 750 mA
−25
2.00 2.02 2.04
Figure 9. Wideband Gain and IRL
(at Small Signal)
RF Device Data
Freescale Semiconductor
MRF18090BR3 MRF18090BSR3
5