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MC9S08GT16AMFBE Datasheet, PDF (50/300 Pages) Freescale Semiconductor, Inc – MC9S08GT16A/GT8A Features | |||
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Memory
NOTE
Do not program any byte in the FLASH more than once after a successful
erase operation. Reprogramming bits in a byte which is already
programmed is not allowed without ï¬rst erasing the page in which the byte
resides or mass erasing the entire FLASH memory. Programming without
ï¬rst erasing may disturb data stored in the FLASH.
2. Write the command code for the desired command to FCMD. The ï¬ve valid commands are blank
check (0x05), byte program (0x20), burst program (0x25), page erase (0x40), and mass erase
(0x41). The command code is latched into the command buffer.
3. Write a 1 to the FCBEF bit in FSTAT to clear FCBEF and launch the command (including its
address and data information).
A partial command sequence can be aborted manually by writing a 0 to FCBEF any time after the write to
the memory array and before writing the 1 that clears FCBEF and launches the complete command.
Aborting a command in this way sets the FACCERR access error ï¬ag which must be cleared before
starting a new command.
A strictly monitored procedure must be adhered to, or the command will not be accepted. This minimizes
the possibility of any unintended change to the FLASH memory contents. The command complete ï¬ag
(FCCF) indicates when a command is complete. The command sequence must be completed by clearing
FCBEF to launch the command. Figure 4-2 is a ï¬owchart for executing all of the commands except for
burst programming. The FCDIV register must be initialized before using any FLASH commands. This
must be done only once following a reset.
MC9S08GT16A/GT8A Data Sheet, Rev. 1
50
Freescale Semiconductor
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