MRF6VP41KHSR6 Datasheet, PDF (5/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

1000
C_iss
TYPICAL CHARACTERISTICS
100
C_oss
100
Measured with ±30 mV(rms)ac @ 1 MHz
10
V_GS = 0 Vdc
10
C_rss
T_J = 200°C
T_J = 150°C
T_J = 175°C
1
0
10
20
30
40
50
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain - Source Voltage
21
80
20
V_DD = 50 Vdc
I_DQ = 150 mA
70
G_ps
19 ^{f = 450 MHz}
60
Pulse Width = 100 μsec
18 ^{Duty Cycle = 20%}
50
17
40
η_D
16
30
15
20
14
10
13
0
1
10
100
1000 2000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
23
I_DQ = 6000 mA
22
3600 mA
21
20
1500 mA
19
18
17
10
750 mA
375 mA
150 mA
V_DD = 50 Vdc
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
100
1000 2000
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
T_C = 25°C
1
1
10
100
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 5. DC Safe Operating Area
65
64
P3dB = 60.70 dBm (1174.89 W) ^Ideal
63
62
P1dB = 60.33 dBm (1078.94 W)
61
60
Actual
59
58
V_DD = 50 Vdc
I_DQ = 150 mA
57
f = 450 MHz
56
Pulse Width = 100 μsec
Duty Cycle = 20%
55
34 35 36 37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm) PULSED
Figure 7. Pulsed Output Power versus
Input Power
22
20
18
50 V
45 V
16
40 V
35 V
V_DD = 30 V
14
I_DQ = 150 Vdc, f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
12
0
200 400 600 800 1000 1200 1400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6
5