MRF6VP41KHSR6 Datasheet, PDF (1/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for pulsed wideband applications with frequencies up to
450 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulsed Performance at 450 MHz: V_DD = 50 Volts, I_DQ = 150 mA,
P_out = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 20 dB
Drain Efficiency — 64%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power
Features
• CW Operation Capability with Adequate Liquid Cooling
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Excellent Thermal Stability
• Designed for Push - Pull Operation
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Document Number: MRF6VP41KH
Rev. 3, 11/2008
MRF6VP41KHR6
MRF6VP41KHSR6
10 - 450 MHz, 1000 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D - 05, STYLE 1
NI - 1230
MRF6VP41KHR6
CASE 375E - 04, STYLE 1
NI - 1230S
MRF6VP41KHSR6
PARTS ARE PUSH - PULL
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T_C = 25°C
Derate above 25°C
Rating
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
RF_inA/V_GSA 3
1 RF_outA/V_DSA
RF_inB/V_GSB 4
2 RF_outB/V_DSB
(Top View)
Figure 1. Pin Connections
Symbol
V_DSS
V_GS
T_stg
T_C
T_J
CW
Value
- 0.5, +110
- 6, +10
- 65 to +150
150
200
1176
5.5
Unit
Vdc
Vdc
°C
°C
°C
W
W/°C
MRF6VP41KHR6 MRF6VP41KHSR6
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