MRF6VP41KHSR6 Datasheet, PDF (12/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
3
Date
Jan. 2008
Apr. 2008
Sept. 2008
Nov. 2008
Description
• Initial Release of Data Sheet
• Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
• Added Note to Fig. 4, Capacitance versus Drain - Source Voltage, to denote that each side of device is
measured separately, p. 5
• Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per - side basis, p. 5
• Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the
MTTF factor accordingly, p. 6
• Added CW operation capability bullet to Features section, p. 1
• Added CW operation to Maximum Ratings table, p. 1
• Added CW thermal data to Thermal Characteristics table, p. 2
• Fig. 14, Series Equivalent Source and Load Impedance, corrected Z_source copy to read “Test circuit
impedance as measured from gate to gate, balanced configuration” and Z_load copy to read “Test circuit
impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to
show push - pull test conditions, p. 7
MRF6VP41KHR6 MRF6VP41KHSR6
12
RF Device Data
Freescale Semiconductor