MRF6V2010N_10 Datasheet, PDF (5/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
100
100
C_iss
10
C_oss
Measured with ±30 mV(rms)ac @ 1 MHz
1
V_GS = 0 Vdc
C_rss
0.1
0
10
20
30
40
50
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
0.35
0.3
V_GS = 3 V
0.25
0.2
2.75 V
0.15
2.63 V
0.1
2.5 V
0.05
2.25 V
0
0
20
40
60
80
100
120
DRAIN VOLTAGE (VOLTS)
Figure 5. DC Drain Current versus Drain Voltage
--20 _{15 mA}
--25 23 mA
--30
30 mA
--35
38 mA
--40
45 mA
--45
--50
I_DQ = 60 mA
--55
V_DD = 50 Vdc
f1 = 220 MHz, f2 = 220.1 MHz
Two--Tone Measurements
100 kHz Tone Spacing
1
10
20
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Third Order Intermodulation Distortion
versus Output Power
10
1
T_C = 25°C
0.1
1
10
100 200
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
25
24
I_DQ = 45 mA
38 mA
23
30 mA
22
23 mA
21
20 15 mA
19
V_DD = 50 Vdc
f1 = 220 MHz
18
0.1
1
10 20
P_out, OUTPUT POWER (WATTS) CW
Figure 6. CW Power Gain versus Output Power
47
Ideal
45
P3dB = 40.87 dBm (12.2 W)
43
P1dB = 40.43 dBm (11.04 W)
41
Actual
39
V_DD = 50 Vdc, I_DQ = 30 mA
f = 220 MHz
37
13
15
17
19
21
23
P_in, INPUT POWER (dBm)
Figure 8. CW Output Power versus Input Power
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
5