MRF6V2010N_10 Datasheet, PDF (13/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Source S--Parameters (V_DD = 50 V, I_DQ = 30 mA, T_A = 25°C, 50 Ohm System) (continued)
f
MHz
800
|S₁₁|
0.858
S₁₁
∠φ
--139.7
S₂₁
|S₂₁|
1.697
∠φ
40.2
S₁₂
|S₁₂|
0.00839
∠φ
--31.1
|S₂₂|
0.932
820
0.861
--140.7
1.636
38.9
0.00818
--32.1
0.934
840
0.864
--141.6
1.578
37.6
0.00798
--33.1
0.935
860
0.867
--142.6
1.523
36.4
0.00781
--33.8
0.936
880
0.870
--143.5
1.471
35.1
0.00763
--34.8
0.938
900
0.873
--144.5
1.421
33.9
0.00745
--35.9
0.939
S₂₂
∠φ
--107.6
--109.0
--110.4
--111.7
--112.9
--114.1
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
13