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MRF6V2010N_10 Datasheet, PDF (1/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA,
Pout = 10 Watts
Power Gain — 23.9 dB
Drain Efficiency — 62%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• TO--270--2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO--272--2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Document Number: MRF6V2010N
Rev. 5, 4/2010
MRF6V2010NR1
MRF6V2010NBR1
10--450 MHz, 10 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265--09, STYLE 1
TO--270--2
PLASTIC
MRF6V2010NR1
CASE 1337--04, STYLE 1
TO--272--2
PLASTIC
MRF6V2010NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
VDSS
VGS
Tstg
TC
TJ
--0.5, +110
--0.5, +10
-- 65 to +150
150
225
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Thermal Resistance, Junction to Case
Case Temperature 81°C, 10 W CW
RθJC
3.0
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
1