MRF377HR3 Datasheet, PDF (5/16 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL NARROWBAND CHARACTERISTICS
19
−20
18.5
G_ps
18
17.5
17
16.5
16
10
V_DD = 32 Vdc
I_DQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 2. Two - Tone Power Gain versus
Output Power
−30
I_DQ = 1400 mA
−40
1600 mA
−50
−60
−70
10
1800 mA
2000 mA
2200 mA
V_DD = 32 Vdc
f1 = 859.95 MHz, f2 = 860.05 MHz
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 3. Third Order Intermodulation Distortion
versus Output Power
−20
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
−80
10
V_DD = 32 Vdc
I_DQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
45
V_DD = 32 Vdc
40 _{IDQ = 2000 mA}
f1 = 859.95 MHz, f2 = 860.05 MHz
35
η_D
30
25
20
15
10
5
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Drain Efficiency versus
Output Power
19
60
G_ps
18
40
17
20
η_D
16
0
V_DD = 32 Vdc
15
I_DQ = 2000 mA
−20
f1 = 859.95 MHz, f2 = 860.05 MHz
14
−40
IMD
13
−60
12
−80
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Efficiency and IMD
versus Output Power
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
5