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MRF377HR3 Datasheet, PDF (10/16 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS
18
45
17 Gps
40
16
35
15
ηD
14
13
12
11
10
9 ACPR
30
25
VDD = 32 Vdc
Pout = 80 W (Avg.)
−15
IDQ = 2000 mA
−20
ATSC 8VSB
−25
−30
−35
8
−45
420 480 540 600 660 720 780 840 900
f, FREQUENCY (MHz)
Figure 14. Single - Channel ATSC 8VSB
Broadband Performance
19
18.5
560 MHz
18
660 MHz
17.5
860 MHz
17
470 MHz
760 MHz
VDD = 32 Vdc
IDQ = 2000 mA
ATSC 8VSB
16.5
16
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 15. Single - Channel ATSC 8VSB Broadband
Performance Power Gain versus Output Power
40
VDD = 32 Vdc
35 IDQ = 2000 mA
ATSC 8VSB
30
25
20
15
470 MHz
560 MHz
660 MHz
760 MHz
860 MHz
10
5
0
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 16. Single - Channel ATSC 8VSB Broadband
Performance Drain Efficiency versus Output Power
−25
−30
−35
470 MHz
860 MHz
−10
−20
−30
−40
IMRL
−50
Reference
Point
660 MHz
−40
760 MHz
−45
−50
560 MHz
VDD = 32 Vdc
IDQ = 2000 mA
ATSC 8VSB
10
100
−60
−70
−80
3.25 MHz
3.25 MHz
−90
Offset
Offset
−100
−4.0 −3.2 −2.4 −1.6 −0.8 0 0.8 1.6 2.4
Pout, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
Figure 17. Single - Channel ATSC 8VSB Broadband Performance
Adjacent Channel Power Ratio versus Output Power
Figure 18. ATSC 8VSB Spectrum
IMRU
3.2 4.0
MRF377HR3 MRF377HR5
10
RF Device Data
Freescale Semiconductor