MRF377HR3 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
Document Number: MRF377H
Rev. 1, 5/2006
RF Power Field - Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large- signal, common source amplifier applications
in 32 volt digital television transmitter equipment.
• Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts,
I_DQ = 2000 mA, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain ≥ 16.7 dB
Drain Efficiency ≥ 21%
ACPR ≤ - 58 dBc
• Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts,
I_DQ = 2000 mA
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Drain Efficiency ≥ 27.5%
IMD ≤ - 31.3 dBc
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Device Designed for Push - Pull Operation Only
• Integrated ESD Protection
• Excellent Thermal Stability
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
MRF377HR3
MRF377HR5
470 - 860 MHz, 45 W AVG., 32 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 375G - 04, STYLE 1
NI - 860C3
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
I_D
P_D
- 0.5, +65
- 0.5, +15
17
648
3.7
Vdc
Vdc
Adc
W
W/°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T_C = 25°C
Derate above 25°C
T_stg
- 65 to +150
°C
T_C
150
°C
T_J
200
°C
CW
235
W
1.38
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 105 W CW
Case Temperature 77°C, 45 W CW
R_θJC
0.27
0.29
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
1