MRF18090AR3 Datasheet, PDF (5/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
16
15
I_DQ = 1000 mA
750 mA
14
13
500 mA
120
100
I_DQ = 750 mA
f = 1880 MHz
80
60
P_in = 3.65 W
2W
12
300 mA
11
10
0.1
1.0
V_DD = 26 Vdc
f = 1880 MHz
10
100
P_out, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus
Output Power
40
1W
20
0
12 14 16 18 20 22 24 26 28 30 32
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
100
120
60
90
80
70
60
50
40
30
20
10
0
1.795
P_in = 3.65 W
2W
V_DD = 26 Vdc
I_DQ = 750 mA
1W
1.815
1.835
1.855
f, FREQUENCY (GHz)
1.875
1.895
100
80
60
40
20
0
0
50
h
40
P_out
30
20
V_DD = 26 Vdc
I_DQ = 750 mA
10
f = 1880 MHz
0
1
2
3
4
5
P_in, INPUT POWER (WATTS)
Figure 7. Output Power versus Frequency
Figure 8. Output Power and Efficiency
versus Input Power
15
0
G_ps
−5
12
−10
IRL
9
V_DD = 26 Vdc
I_DQ = 750 mA
6
1.75
1.80
1.85
1.90
f, FREQUENCY (GHz)
Figure 9. Wideband Gain and IRL
(at Small Signal)
−15
−20
−25
−30
1.95
RF Device Data
Freescale Semiconductor
MRF18090AR3
5