MRF18090AR3 Datasheet, PDF (1/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for GSM and GSM EDGE base station applications with frequencies
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for GSM and GSM EDGE cellular radio
applications.
• GSM and GSM EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts CW
Efficiency — 52% (Typ) @ 90 Watts CW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF18090A
Rev. 7, 5/2006
MRF18090AR3
1.80 - 1.88 GHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465B - 03, STYLE 1
NI - 880
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Symbol
V_DSS
V_GS
P_D
T_stg
T_C
T_J
Symbol
R_θJC
Value
- 0.5, +65
- 0.5, +15
250
1.43
- 65 to +150
150
200
Value
0.7
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF18090AR3
1