MRF18090AR3 Datasheet, PDF (2/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain- Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 μAdc)
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
On Characteristics
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 750 mAdc)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Functional Tests (In Freescale Test Fixture)
Common- Source Amplifier Power Gain @ 90 W ⁽¹⁾
(V_DD = 26 Vdc, I_DQ = 750 mA, f = 1805 - 1880 MHz)
Drain Efficiency @ 90 W ⁽¹⁾
(V_DD = 26 Vdc, I_DQ = 750 mA, f = 1805 - 1880 MHz)
Input Return Loss ⁽¹⁾
(V_DD = 26 Vdc, P_out = 90 W CW, I_DQ = 750 mA,
f = 1805 - 1880 MHz)
V_(BR)DSS
65
—
—
Vdc
I_DSS
—
—
10
μAdc
I_GSS
—
—
1
μAdc
V_GS(Q)
2.5
3.7
4.5
Vdc
V_DS(on)
—
0.1
—
Vdc
g_fs
—
7.2
—
S
C_rss
—
4.2
—
pF
G_ps
dB
12.0
13.5
—
η
%
47
52
—
IRL
dB
—
—
- 10
1. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring batch - to - batch
consistency.
MRF18090AR3
2
RF Device Data
Freescale Semiconductor