MKW01Z128 Datasheet, PDF (47/67 Pages) Freescale Semiconductor, Inc – Highly-integrated, cost-effective single-package solution for sub-1 GHz applications

Peripheral operating requirements and behaviors
Table 14. NVM program/erase timing specifications
Symbol
t_hvpgm4
t_hversscr
t_hversall
Description
Longword Program high-voltage time
Sector Erase high-voltage time
Erase All high-voltage time
Min.
Typ.
Max.
Unit
—
7.5
18
μs
—
13
113
ms
—
52
452
ms
1. Maximum time based on expectations at cycling end-of-life.
Notes
1
1
2.4.1.2 Flash timing specifications — commands
Table 15. Flash command timing specifications
Symbol
t_rd1sec1k
t_pgmchk
t_rdrsrc
t_pgm4
t_ersscr
t_rd1all
t_rdonce
t_pgmonce
t_ersall
t_vfykey
Description
Read 1s Section execution time (flash sector)
Program Check execution time
Read Resource execution time
Program Longword execution time
Erase Flash Sector execution time
Read 1s All Blocks execution time
Read Once execution time
Program Once execution time
Erase All Blocks execution time
Verify Backdoor Access Key execution time
Min.
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
65
14
—
—
65
88
—
Max.
60
45
30
145
114
1.8
25
—
650
30
Unit
Notes
μs
1
μs
1
μs
1
μs
ms
2
ms
μs
1
μs
ms
2
μs
1
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
2.4.1.3 Flash high voltage current behaviors
Table 16. Flash high voltage current behaviors
Symbol Description
Min.
Typ.
Max.
Unit
I_{DD_PGM} Average current adder during high voltage
—
flash programming operation
2.5
6.0
mA
I_{DD_ERS} Average current adder during high voltage
—
flash erase operation
1.5
4.0
mA
2.4.1.4 Reliability specifications
Table 17. NVM reliability specifications
Symbol Description
Min.
Typ.¹
Program Flash
t_nvmretp10k Data retention after up to 10 K cycles
t_nvmretp1k Data retention after up to 1 K cycles
5
50
20
100
Table continues on the next page...
Max.
—
—
Unit
years
years
Notes
MKW01 MCU Section Data Sheet Data Sheet, Rev. 5, 3/2014.
20
Freescale Semiconductor, Inc.