MKW01Z128 Datasheet, PDF (22/67 Pages) Freescale Semiconductor, Inc – Highly-integrated, cost-effective single-package solution for sub-1 GHz applications

Table 8. ESD and Latch-Up Protection Characteristics
No.
Rating¹
Symbol
Min
Max
Unit
1
Human body model (HBM)
V_HBM
2000
—
V
2
Machine model (MM)
V_MM
200
—
V
3
Charge device model (CDM)
V_CDM
500
—
V
4
Latch-up current at T_A = 85C
I_LAT
100
—
mA
1 _{Parameter is achieved by design characterization on a small sample size from typical devices}
under typical conditions unless otherwise noted.
8.3 Transceiver Electrical Characteristics
The tables below give the electrical specifications of the transceiver under the following conditions:
Supply voltage VBAT1= VBAT2=VDD=3.3 V, temperature = 25 °C, FXOSC = 32 MHz, FRF = 915 MHz,
Pout = +13dBm, 2-level FSK modulation without pre-filtering, FDA = 5 kHz, Bit Rate = 4.8 kb/s and
terminated in a matched 50 Ohm impedance, unless otherwise specified.
NOTE
Unless otherwise specified, the performances in the other frequency bands
are similar or better.
8.3.1 Transceiver Recommended Operating Conditions
Table 9. Recommended Operating Conditions
Characteristic
Power Supply Voltage (V_BATT)
Operating Temperature Range
Logic Input Voltage Low
Logic Input Voltage High
Logic Output Voltage Low (I_max = -1 mA)
Logic Output Voltage High (I_max = 1 mA)
Load capacitance on digital ports
SPI Clock Rate
RF Input Power
Crystal Reference Oscillator Frequency
Symbol
T_A
V_IL
V_IH
V_OL
V_OH
C_L
f_SPI
P_max
f_ref
Min
Typ
Max
Unit
1.8
3.6
Vdc
-40
25
85
C
0
-
20%
V
V_BATT
80%
-
V_BATT
V
V_BATT
0
-
10%
V
V_BATT
90%
-
V_BATT
V
V_BATT
25
pF
-
-
8.0
MHz
-
-
0
dBm
32 MHz Only
(Some variants may use 30 MHz instead)
MKW01Z128 Advance Information, Rev. 5
22
Freescale Semiconductor